NXH010P120MNF1PTG
onsemi
onsemi
PIM F1 SIC HALFBRIDGE 1200V 10MO
$145.82
Available to order
Reference Price (USD)
1+
$145.82000
500+
$144.3618
1000+
$142.9036
1500+
$141.4454
2000+
$139.9872
2500+
$138.529
Exquisite packaging
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NXH010P120MNF1PTG
$145.82
Product details
The NXH010P120MNF1PTG by onsemi is a top-tier MOSFET array in the Discrete Semiconductor Products category, specifically designed for Transistors - FETs, MOSFETs - Arrays. This product is perfect for applications requiring high power efficiency and compact design, offering exceptional performance and reliability.\n\nKey attributes of the NXH010P120MNF1PTG include minimal conduction losses, high switching speed, and superior thermal management. The array configuration allows for efficient use of PCB space while maintaining high performance. Its design ensures compatibility with a variety of driving circuits, making it highly versatile.\n\nIdeal applications include robotics, consumer electronics, and aerospace systems. In robotics, it provides precise motor control and power management. Consumer electronics benefit from its efficiency and compact size. Aerospace systems rely on its reliability under extreme conditions.\n\nEnhance your designs with the NXH010P120MNF1PTG. Contact us for pricing and availability details. Our experts are ready to help you find the perfect solution for your needs.
General specs
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Source
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
- Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
- Vgs(th) (Max) @ Id: 4.3V @ 40mA
- Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V
- Power - Max: 250W (Tj)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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