NE5520379A-T1A-A
Renesas
Renesas
SILICON MEDIUM POWER LDMOSFET, R
$5.80
Available to order
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NE5520379A-T1A-A
$5.80
Product details
Discover the NE5520379A-T1A-A RF MOSFET transistor from Renesas, a high-efficiency solution for discrete semiconductor products. This transistor is optimized for RF applications, providing excellent amplification and signal integrity. Its advanced FET technology ensures low noise and high gain, essential for precision electronics. The NE5520379A-T1A-A is designed to handle high power levels while maintaining thermal efficiency. With superior linearity and switching speed, it is ideal for high-frequency circuits. The transistor's robust construction ensures reliability in challenging environments. Its compact design allows for flexible integration into various electronic systems. The NE5520379A-T1A-A is perfect for applications requiring stable and efficient RF performance. Key advantages include minimal signal loss, high impedance matching, and excellent thermal management. These features make it suitable for use in wireless base stations, satellite receivers, and defense communication systems. It is also well-suited for consumer electronics, automotive infotainment, and industrial control systems. The NE5520379A-T1A-A delivers consistent performance across a wide range of frequencies. Renesas has crafted this MOSFET to meet the highest industry benchmarks. For superior RF functionality, the NE5520379A-T1A-A is an outstanding choice. Upgrade your electronic designs with this high-quality transistor. Request a quote or submit an inquiry online to get started. Trust the NE5520379A-T1A-A from Renesas for all your RF needs.
General specs
- Product Status: Last Time Buy
- Transistor Type: LDMOS
- Frequency: 915MHz
- Gain: 16dB
- Voltage - Test: 3.2 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 600 mA
- Power - Output: 35.5dBm
- Voltage - Rated: 15 V
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: 79A
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