BLP8G27-10Z
Ampleon USA Inc.
Ampleon USA Inc.
RF FET LDMOS 65V 17DB 16VDFN
$13.78
Available to order
Reference Price (USD)
500+
$10.52048
1,000+
$9.64982
Exquisite packaging
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Ampleon USA Inc. BLP8G27-10Z is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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BLP8G27-10Z
$13.78
Product details
Discover the BLP8G27-10Z RF MOSFET transistor from Ampleon USA Inc., a high-efficiency solution for discrete semiconductor products. This transistor is optimized for RF applications, providing excellent amplification and signal integrity. Its advanced FET technology ensures low noise and high gain, essential for precision electronics. The BLP8G27-10Z is designed to handle high power levels while maintaining thermal efficiency. With superior linearity and switching speed, it is ideal for high-frequency circuits. The transistor's robust construction ensures reliability in challenging environments. Its compact design allows for flexible integration into various electronic systems. The BLP8G27-10Z is perfect for applications requiring stable and efficient RF performance. Key advantages include minimal signal loss, high impedance matching, and excellent thermal management. These features make it suitable for use in wireless base stations, satellite receivers, and defense communication systems. It is also well-suited for consumer electronics, automotive infotainment, and industrial control systems. The BLP8G27-10Z delivers consistent performance across a wide range of frequencies. Ampleon USA Inc. has crafted this MOSFET to meet the highest industry benchmarks. For superior RF functionality, the BLP8G27-10Z is an outstanding choice. Upgrade your electronic designs with this high-quality transistor. Request a quote or submit an inquiry online to get started. Trust the BLP8G27-10Z from Ampleon USA Inc. for all your RF needs.
General specs
- Product Status: Last Time Buy
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 2.14GHz
- Gain: 17dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 110 mA
- Power - Output: 2W
- Voltage - Rated: 65 V
- Package / Case: 16-VDFN Exposed Pad
- Supplier Device Package: 16-HVSON (6x4)
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