HSG1002VE-TL-E
Renesas Electronics America Inc
Renesas Electronics America Inc
RF 0.035A C BAND GERMANIUM NPN
$0.39
Available to order
Reference Price (USD)
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$0.39000
500+
$0.3861
1000+
$0.3822
1500+
$0.3783
2000+
$0.3744
2500+
$0.3705
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HSG1002VE-TL-E
$0.39
Product details
Elevate your RF designs with Renesas Electronics America Inc's HSG1002VE-TL-E bipolar junction transistor, a premium choice in discrete semiconductor components. This BJT features exceptional gain flatness across wide bandwidths, making it ideal for multi-channel communication systems. Its advanced surface treatment process reduces recombination losses while improving high-frequency response. The transistor offers excellent parameter consistency with tight production tolerances for predictable performance. Key application areas include phased array radar systems requiring precise amplitude and phase matching. Commercial wireless applications span LTE-Advanced and 5G NR small cell power amplifiers. In industrial settings, it enables reliable operation in RFID readers and wireless process monitoring equipment. The medical diagnostics sector benefits from its low-noise characteristics in portable ultrasound imaging devices. The HSG1002VE-TL-E also supports critical functions in electronic countermeasure systems and spectrum monitoring equipment. Its versatile packaging options accommodate various heat sinking requirements and PCB mounting configurations. Renesas Electronics America Inc backs this product with extensive reliability testing including HTOL and ESD robustness verification. Access our online design center for simulation models and reference circuit layouts. Our application engineers are available to provide technical guidance on impedance matching networks and stability analysis. Contact us today to discuss your project requirements and receive competitive pricing for the HSG1002VE-TL-E RF transistor series.
General specs
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 3.5V
- Frequency - Transition: 38GHz
- Noise Figure (dB Typ @ f): 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
- Gain: 8dB ~ 19.5dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 2V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Gull Wing
- Supplier Device Package: 4-MFPAK
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