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NE68139-T1-A

Renesas
NE68139-T1-A Preview
Renesas
SAME AS 2SC4094 NPN SILICON AMPL
$2.00
Available to order
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Renesas NE68139-T1-A is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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NE68139-T1-A

NE68139-T1-A

$2.00

Product details

Optimize your RF circuits with the NE68139-T1-A BJT transistor from Renesas, a premium solution in the discrete semiconductor products market. This RF bipolar transistor delivers exceptional linearity and low intermodulation distortion, crucial for high-fidelity signal processing. Its advanced architecture ensures minimal phase noise, making it perfect for precision applications. The device features enhanced thermal management properties and electromagnetic shielding for reliable operation in harsh environments. With its compact form factor, the NE68139-T1-A saves valuable board space without compromising performance. Typical implementations include cellular infrastructure equipment where consistent signal amplification is vital. Industrial automation systems benefit from its robustness in motor control and sensor interfaces. For military applications, it provides secure communication links in encrypted transmission systems. The transistor also excels in scientific instrumentation requiring accurate signal measurement. Engineers appreciate its design flexibility for both narrowband and broadband configurations. Renesas backs this product with rigorous quality testing and long-term reliability assurance. Whether you're upgrading existing equipment or developing next-gen RF solutions, the NE68139-T1-A offers the performance edge you need. Visit our website to compare technical specifications or request a sample for evaluation. Let our experts guide you to the ideal transistor solution submit your project requirements now for a customized quotation.

General specs

  • Product Status: Last Time Buy
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 15dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143

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