HFA3046BZ
Renesas Electronics America Inc
Renesas Electronics America Inc
RF TRANS 5 NPN 12V 8GHZ 14SOIC
$12.53
Available to order
Reference Price (USD)
1+
$9.77000
10+
$8.82700
50+
$8.41620
100+
$7.30780
250+
$6.97936
500+
$6.36352
1,000+
$5.54243
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HFA3046BZ
$12.53
Product details
Renesas Electronics America Inc presents the HFA3046BZ a high-reliability RF BJT transistor engineered for critical discrete semiconductor applications. This bipolar junction transistor delivers superior phase linearity and dynamic range performance essential for modern communication systems. Its advanced epitaxial base structure minimizes transit time effects while maintaining excellent current handling capacity. The product features a gold metallization system for optimal contact reliability and corrosion resistance. Engineers will appreciate the well-defined S-parameters and consistent high-frequency characteristics across production lots. Primary implementations include military-grade encrypted communication devices and electronic warfare systems. Commercial applications span point-to-point radio links and cellular small cell infrastructure deployments. In the medical field, it enables precise signal generation in therapeutic ultrasound devices and MRI gradient amplifiers. The HFA3046BZ also serves vital functions in industrial process control systems and automated test equipment. Its compatibility with both leaded and surface-mount assembly processes provides design flexibility. Renesas Electronics America Inc employs rigorous screening protocols to ensure military-specification compliance where required. The transistor comes with complete characterization data and application-specific performance guidelines. Access our online design support tools including impedance matching calculators and thermal modeling software. Contact our technical sales team for assistance selecting the optimal HFA3046BZ variant for your RF power amplification requirements.
General specs
- Product Status: Active
- Transistor Type: 5 NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
- Gain: -
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V
- Current - Collector (Ic) (Max): 65mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 14-SOIC
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