HFA3096B
Intersil
Intersil
RF SMALL SIGNAL TRANSISTOR
$4.04
Available to order
Reference Price (USD)
1+
$4.04000
500+
$3.9996
1000+
$3.9592
1500+
$3.9188
2000+
$3.8784
2500+
$3.838
Exquisite packaging
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HFA3096B
$4.04
Product details
The HFA3096B by Intersil redefines expectations for RF BJT transistors in the discrete semiconductor products segment. This high-frequency bipolar transistor combines low saturation voltage with impressive current gain characteristics, optimized for efficient signal processing. Its multi-emitter structure enhances switching speed while maintaining linear amplification capabilities. The product incorporates proprietary passivation techniques that improve long-term reliability and moisture resistance. Design engineers will appreciate the predictable performance curves and well-characterized noise parameters. Key application areas include satellite communication ground stations requiring stable uplink/downlink conversion. In automotive systems, it enables precise signal conditioning for collision avoidance radar and vehicle-to-everything (V2X) communication modules. Industrial IoT applications benefit from its low-power operation in wireless sensor networks and edge computing devices. The HFA3096B also serves critical functions in marine navigation equipment and underwater communication systems. Its compatibility with automated pick-and-place manufacturing processes simplifies high-volume production integration. Intersil subjects each unit to extensive parametric testing and quality verification procedures. For engineers developing compact RF solutions, this transistor offers an optimal balance of performance and footprint efficiency. Access detailed SPICE models and reference designs through our technical portal. Connect with our regional sales representatives to discuss volume pricing options or request evaluation kits for the HFA3096B transistor series.
General specs
- Product Status: Obsolete
- Transistor Type: 3 NPN + 2 PNP
- Voltage - Collector Emitter Breakdown (Max): 12V, 15V
- Frequency - Transition: 8GHz, 5.5GHz
- Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
- Gain: -
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V / 20 @ 10mA, 2V
- Current - Collector (Ic) (Max): 65mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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