2SC5631JRTR-E
Renesas Electronics America Inc
        
                                Renesas Electronics America Inc                            
                        
                                BIPOLAR TRANSISTOR, 15V, NPN                            
                        $0.51
                            
                                
                                Available to order
                            
                        Reference Price (USD)
1+
                                            $0.51000
                                        500+
                                            $0.5049
                                        1000+
                                            $0.4998
                                        1500+
                                            $0.4947
                                        2000+
                                            $0.4896
                                        2500+
                                            $0.4845
                                        Exquisite packaging
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                            Product details
Experience superior semiconductor performance with the 2SC5631JRTR-E, a high-efficiency Bipolar Junction Transistor from Renesas Electronics America Inc. As part of the Discrete Semiconductor Products catalog, this single BJT delivers optimal characteristics for both switching and amplification functions. The transistor features excellent high-frequency response and linear gain characteristics throughout its operating range. Its optimized geometry minimizes parasitic elements that can affect circuit stability. The 2SC5631JRTR-E demonstrates remarkable thermal stability, maintaining performance across environmental conditions. Design applications range from small-signal preamplifiers to power driver stages in various electronic systems. Telecommunications infrastructure, automotive control modules, and industrial sensors frequently incorporate this versatile component. Renesas Electronics America Inc produces the 2SC5631JRTR-E using advanced wafer fabrication and assembly techniques. The transistor's packaging options include both through-hole and surface-mount variants for design flexibility. With its proven reliability and technical specifications, the 2SC5631JRTR-E stands out in competitive BJT offerings. To discuss customization options or request samples, complete our convenient online contact form for prompt assistance from our technical sales team.
                General specs
- Product Status: Active
 - Transistor Type: -
 - Current - Collector (Ic) (Max): -
 - Voltage - Collector Emitter Breakdown (Max): -
 - Vce Saturation (Max) @ Ib, Ic: -
 - Current - Collector Cutoff (Max): -
 - DC Current Gain (hFE) (Min) @ Ic, Vce: -
 - Power - Max: -
 - Frequency - Transition: -
 - Operating Temperature: -
 - Mounting Type: -
 - Package / Case: -
 - Supplier Device Package: -
 
