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JANSD2N2369AU/TR

Microchip Technology
JANSD2N2369AU/TR Preview
Microchip Technology
RH DUAL - SMALL-SIGNAL BJT
$134.22
Available to order
Reference Price (USD)
1+
$134.22000
500+
$132.8778
1000+
$131.5356
1500+
$130.1934
2000+
$128.8512
2500+
$127.509
Exquisite packaging
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Microchip Technology JANSD2N2369AU/TR is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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JANSD2N2369AU/TR

JANSD2N2369AU/TR

$134.22

Product details

Optimize your circuit performance with the JANSD2N2369AU/TR, a precision Bipolar Junction Transistor from Microchip Technology. This single BJT in the Discrete Semiconductor Products lineup delivers exceptional gain bandwidth product for high-frequency applications. The transistor's low base-emitter voltage requirement enhances energy efficiency in battery-powered devices. Its symmetrical current handling capabilities support bidirectional circuit designs when needed. The JANSD2N2369AU/TR exhibits excellent parameter matching, crucial for differential amplifier stages. Typical implementations include sensor interfaces, signal conditioning circuits, and pulse generators. Aerospace systems, marine electronics, and scientific instrumentation benefit from this BJT's reliable operation. The component undergoes rigorous testing for parameter stability and long-term reliability. Its moisture-resistant packaging ensures performance in humid environments. Microchip Technology employs state-of-the-art fabrication techniques to maintain consistent quality across production runs. The JANSD2N2369AU/TR combines cutting-edge semiconductor technology with practical design features. For detailed specifications and purchasing information, complete our online contact form to connect with a product specialist.

General specs

  • Product Status: Active
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): 15 V
  • Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 400nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: -

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