P3M06060G7
PN Junction Semiconductor
PN Junction Semiconductor
SICFET N-CH 650V 44A TO-263-7
$10.38
Available to order
Reference Price (USD)
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$10.38000
500+
$10.2762
1000+
$10.1724
1500+
$10.0686
2000+
$9.9648
2500+
$9.861
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P3M06060G7
$10.38
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 44A
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 79mOhm @ 20A, 15V
- Vgs(th) (Max) @ Id: 2.2V @ 20mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +20V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 159W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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