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IXTA3N120-TRR

IXYS
IXTA3N120-TRR Preview
IXYS
MOSFET N-CH 1200V 3A TO263
$5.39
Available to order
Reference Price (USD)
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$5.38575
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$5.3318925
1000+
$5.278035
1500+
$5.2241775
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$5.17032
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$5.1164625
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IXTA3N120-TRR

IXTA3N120-TRR

$5.39

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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