P1H06300D8
PN Junction Semiconductor
PN Junction Semiconductor
GANFET N-CH 650V 10A DFN 8X8
$4.98
Available to order
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$4.9302
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$4.8804
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$4.8306
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$4.7808
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$4.731
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P1H06300D8
$4.98
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 10A
- Drive Voltage (Max Rds On, Min Rds On): 6V
- Rds On (Max) @ Id, Vgs: 1.3V @ 1mA
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +10V, -20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 55.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN8*8
- Package / Case: -
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