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SIRA80DP-T1-RE3

Vishay Siliconix
SIRA80DP-T1-RE3 Preview
Vishay Siliconix
MOSFET N-CH 30V 100A PPAK SO-8
$1.66
Available to order
Reference Price (USD)
3,000+
$0.81311
6,000+
$0.78489
Exquisite packaging
Discount
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SIRA80DP-T1-RE3

SIRA80DP-T1-RE3

$1.66

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 0.62mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
  • Vgs (Max): +20V, -16V
  • Input Capacitance (Ciss) (Max) @ Vds: 9530 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 104W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8

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