Shopping cart

Subtotal: $0.00

PJW3P06A_R2_00001

Panjit International Inc.
PJW3P06A_R2_00001 Preview
Panjit International Inc.
60V P-CHANNEL ENHANCEMENT MODE M
$0.54
Available to order
Reference Price (USD)
1+
$0.54000
500+
$0.5346
1000+
$0.5292
1500+
$0.5238
2000+
$0.5184
2500+
$0.513
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Panjit International Inc. PJW3P06A_R2_00001 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
PJW3P06A_R2_00001

PJW3P06A_R2_00001

$0.54

Product details

Panjit International Inc.'s PJW3P06A_R2_00001 stands out in the Discrete Semiconductor Products market as a top-tier single MOSFET transistor in the Transistors - FETs, MOSFETs - Single segment. This component combines cutting-edge semiconductor technology with practical design features for superior electrical performance. The PJW3P06A_R2_00001 demonstrates exceptional characteristics including low gate charge, excellent switching behavior, and reliable overcurrent protection. These features translate to reduced power losses and extended device lifespan in your applications. The transistor's robust construction ensures stable operation in challenging environmental conditions, from temperature extremes to mechanical stress. Industrial engineers will appreciate its versatility in robotics control systems, welding equipment, and power tool applications. For consumer electronics, it's perfect for high-end audio systems, gaming consoles, and smart home devices. The PJW3P06A_R2_00001 also performs exceptionally in renewable energy applications such as solar inverters and wind turbine controls. With its balanced performance metrics, this MOSFET provides the ideal solution for your power management needs. Ready to incorporate this high-quality component into your designs? Submit your inquiry through our user-friendly online platform for quick response and competitive pricing options.

General specs

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 30 V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA

Viewed products

Microchip Technology

APT10035B2FLLG

$0.00 (not set)
Infineon Technologies

IRFP4229PBF

$0.00 (not set)
onsemi

FDP12N50NZ

$0.00 (not set)
onsemi

FDMS86550ET60

$0.00 (not set)
Fairchild Semiconductor

HUF75637P3

$0.00 (not set)
Vishay Siliconix

IRFBC40STRLPBF

$0.00 (not set)
Infineon Technologies

IRFS4321TRLPBF

$0.00 (not set)
Nexperia USA Inc.

PSMN3R9-100YSFX

$0.00 (not set)
Toshiba Semiconductor and Storage

TK290P65Y,RQ

$0.00 (not set)
Infineon Technologies

IRLR3410TRPBF

$0.00 (not set)
Top