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PSMN3R9-100YSFX

Nexperia USA Inc.
PSMN3R9-100YSFX Preview
Nexperia USA Inc.
MOSFET N-CH 100V 120A LFPAK56
$3.07
Available to order
Reference Price (USD)
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$3.07000
500+
$3.0393
1000+
$3.0086
1500+
$2.9779
2000+
$2.9472
2500+
$2.9165
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Nexperia USA Inc. PSMN3R9-100YSFX is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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PSMN3R9-100YSFX

PSMN3R9-100YSFX

$3.07

Product details

The PSMN3R9-100YSFX from Nexperia USA Inc. is a high-performance single MOSFET transistor designed for efficient power management in various electronic applications. This Discrete Semiconductor Product belongs to the Transistors - FETs, MOSFETs - Single category, offering reliable switching capabilities and low power dissipation. Ideal for both industrial and consumer electronics, this component ensures optimal performance in demanding environments. With its advanced design, the PSMN3R9-100YSFX provides enhanced thermal stability and durability, making it a preferred choice for engineers and designers. Whether you're developing power supplies, motor controls, or audio amplifiers, this MOSFET delivers consistent results. Key features include fast switching speeds, low on-resistance, and excellent thermal characteristics. These attributes contribute to improved energy efficiency and reduced heat generation in your circuits. The PSMN3R9-100YSFX finds applications in automotive systems, renewable energy solutions, and industrial automation equipment. For power inverters, battery management systems, or LED drivers, this component offers the reliability you need. Upgrade your designs with the PSMN3R9-100YSFX and experience superior performance. Contact us today for pricing and availability submit your inquiry online to get started!

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
  • Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 50 V
  • FET Feature: -
  • Power Dissipation (Max): 245W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56; Power-SO8
  • Package / Case: SOT-1023, 4-LFPAK

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