Shopping cart

Subtotal: $0.00

PJQ4409P_R2_00001

Panjit International Inc.
PJQ4409P_R2_00001 Preview
Panjit International Inc.
30V P-CHANNEL ENHANCEMENT MODE M
$0.44
Available to order
Reference Price (USD)
1+
$0.44000
500+
$0.4356
1000+
$0.4312
1500+
$0.4268
2000+
$0.4224
2500+
$0.418
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Panjit International Inc. PJQ4409P_R2_00001 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
PJQ4409P_R2_00001

PJQ4409P_R2_00001

$0.44

Product details

Discover the exceptional capabilities of Panjit International Inc.'s PJQ4409P_R2_00001, a premium single MOSFET transistor in the Discrete Semiconductor Products category (Transistors - FETs, MOSFETs - Single). This high-efficiency component is engineered to meet the rigorous demands of modern power electronics, offering superior performance in switching and amplification applications. The PJQ4409P_R2_00001 boasts impressive technical features including optimized gate control, low leakage current, and excellent thermal management properties. Its robust design ensures reliable operation in various environmental conditions, from industrial settings to outdoor installations. The MOSFET's versatile nature makes it ideal for use in electric powertrains, industrial automation controllers, and high-frequency power converters. For consumer applications, it's perfect for high-performance computing, advanced gaming systems, and next-generation home appliances. The component also finds significant utility in green energy applications such as photovoltaic systems and energy storage solutions. With its balanced combination of power handling and efficiency, the PJQ4409P_R2_00001 provides an optimal solution for your most challenging design requirements. Interested in learning more about how this MOSFET can enhance your projects? Our team is ready to assist simply submit your inquiry through our online portal for personalized support and competitive pricing options.

General specs

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 30W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN3333-8
  • Package / Case: 8-PowerVDFN

Viewed products

Vishay Siliconix

SI4116DY-T1-GE3

$0.00 (not set)
Alpha & Omega Semiconductor Inc.

AON6558

$0.00 (not set)
Fairchild Semiconductor

HUFA75344S3

$0.00 (not set)
onsemi

FCB36N60NTM

$0.00 (not set)
Infineon Technologies

IAUA250N04S6N007EAUMA1

$0.00 (not set)
GeneSiC Semiconductor

GA05JT03-46

$0.00 (not set)
Toshiba Semiconductor and Storage

2SK1828TE85LF

$0.00 (not set)
Vishay Siliconix

IRFU320PBF

$0.00 (not set)
IXYS

IXTK90N25L2

$0.00 (not set)
onsemi

NVD5C632NLT4G

$0.00 (not set)
Top