SI4116DY-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 25V 18A 8SO
$1.31
Available to order
Reference Price (USD)
2,500+
$0.52300
5,000+
$0.49844
12,500+
$0.48090
Exquisite packaging
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SI4116DY-T1-GE3
$1.31
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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