PJP60R540E_T0_00001
Panjit International Inc.
Panjit International Inc.
600V N-CHANNEL SUPER JUNCTION MO
$1.69
Available to order
Reference Price (USD)
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$1.69000
500+
$1.6731
1000+
$1.6562
1500+
$1.6393
2000+
$1.6224
2500+
$1.6055
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PJP60R540E_T0_00001
$1.69
Product details
The PJP60R540E_T0_00001 from Panjit International Inc. is a high-performance single MOSFET transistor designed for efficient power management in various electronic applications. This Discrete Semiconductor Product belongs to the Transistors - FETs, MOSFETs - Single category, offering reliable switching capabilities and low power dissipation. Ideal for both industrial and consumer electronics, this component ensures optimal performance in demanding environments. With its advanced design, the PJP60R540E_T0_00001 provides enhanced thermal stability and durability, making it a preferred choice for engineers and designers. Whether you're developing power supplies, motor controls, or audio amplifiers, this MOSFET delivers consistent results. Key features include fast switching speeds, low on-resistance, and excellent thermal characteristics. These attributes contribute to improved energy efficiency and reduced heat generation in your circuits. The PJP60R540E_T0_00001 finds applications in automotive systems, renewable energy solutions, and industrial automation equipment. For power inverters, battery management systems, or LED drivers, this component offers the reliability you need. Upgrade your designs with the PJP60R540E_T0_00001 and experience superior performance. Contact us today for pricing and availability submit your inquiry online to get started!
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 531 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 94W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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