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TJ30S06M3L(T6L1,NQ

Toshiba Semiconductor and Storage
TJ30S06M3L(T6L1,NQ Preview
Toshiba Semiconductor and Storage
MOSFET P-CH 60V 30A DPAK
$0.70
Available to order
Reference Price (USD)
2,000+
$0.63700
Exquisite packaging
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TJ30S06M3L(T6L1,NQ

TJ30S06M3L(T6L1,NQ

$0.70

Product details

General specs

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 21.8mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
  • Vgs (Max): +10V, -20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

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