Shopping cart

Subtotal: $0.00

PJMD900N60EC_L2_00001

Panjit International Inc.
PJMD900N60EC_L2_00001 Preview
Panjit International Inc.
600V SUPER JUNCITON MOSFET
$2.19
Available to order
Reference Price (USD)
1+
$2.19000
500+
$2.1681
1000+
$2.1462
1500+
$2.1243
2000+
$2.1024
2500+
$2.0805
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Panjit International Inc. PJMD900N60EC_L2_00001 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
PJMD900N60EC_L2_00001

PJMD900N60EC_L2_00001

$2.19

Product details

Enhance your electronic designs with the PJMD900N60EC_L2_00001 single MOSFET transistor from Panjit International Inc., a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The PJMD900N60EC_L2_00001 features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the PJMD900N60EC_L2_00001 particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the PJMD900N60EC_L2_00001 represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 400 V
  • FET Feature: -
  • Power Dissipation (Max): 47.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Viewed products

Infineon Technologies

IPD65R420CFDAATMA1

$0.00 (not set)
Diodes Incorporated

DMP3018SSS-13

$0.00 (not set)
Infineon Technologies

IPI100N04S3-03

$0.00 (not set)
NXP USA Inc.

PMFPB8040XP,115

$0.00 (not set)
Renesas Electronics America Inc

UPA2708TP-E1-AZ

$0.00 (not set)
Infineon Technologies

IAUC24N10S5L300ATMA1

$0.00 (not set)
Microchip Technology

APT22F80S

$0.00 (not set)
onsemi

NTMFS4C022NT1G

$0.00 (not set)
Vishay Siliconix

SIHF16N50C-E3

$0.00 (not set)
STMicroelectronics

SCTW35N65G2VAG

$0.00 (not set)
Top