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SCTW35N65G2VAG

STMicroelectronics
SCTW35N65G2VAG Preview
STMicroelectronics
SICFET N-CH 650V 45A HIP247
$20.40
Available to order
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STMicroelectronics SCTW35N65G2VAG is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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SCTW35N65G2VAG

SCTW35N65G2VAG

$20.40

Product details

Enhance your electronic designs with the SCTW35N65G2VAG single MOSFET transistor from STMicroelectronics, a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The SCTW35N65G2VAG features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the SCTW35N65G2VAG particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the SCTW35N65G2VAG represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
  • Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V
  • Vgs (Max): +22V, -10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V
  • FET Feature: -
  • Power Dissipation (Max): 240W (Tc)
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: HiP247™
  • Package / Case: TO-247-3

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