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DME914C10R

Panasonic Electronic Components
DME914C10R Preview
Panasonic Electronic Components
TRANS NPN PREBIAS/PNP SSMINI6
$0.00
Available to order
Reference Price (USD)
8,000+
$0.11990
16,000+
$0.11048
24,000+
$0.10420
56,000+
$0.09688
Exquisite packaging
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Panasonic Electronic Components DME914C10R is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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DME914C10R

DME914C10R

$0.00

Product details

The DME914C10R by Panasonic Electronic Components is a high-performance pre-biased bipolar junction transistor (BJT) array, categorized under Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is engineered to excel in a variety of electronic applications, ensuring reliability and efficiency. The DME914C10R features integrated pre-biasing, reducing the need for external components and streamlining design. Its outstanding thermal stability guarantees consistent operation under different conditions. This BJT array is ideal for signal amplification, load switching, and interface circuits. The DME914C10R is also widely used in industrial automation, consumer electronics, and telecommunication systems. With its high gain and low noise characteristics, it is perfect for precision and sensitive applications. The compact and robust design of the DME914C10R makes it suitable for both mass production and specialized projects. Engineers and designers can trust this transistor array for its consistent quality and performance. For more details on the DME914C10R and to obtain a personalized quote, please submit an inquiry and our team will assist you promptly.

General specs

  • Product Status: Discontinued at Digi-Key
  • Transistor Type: 1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max): 100mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V, 12V
  • Resistor - Base (R1): 4.7kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 270 @ 10mA, 2V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 300MHz
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SSMini6-F3-B

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