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MUN5335DW1T2

onsemi
MUN5335DW1T2 Preview
onsemi
TRANS BRT NPN/PNP 50V SOT363
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MUN5335DW1T2

MUN5335DW1T2

$0.00

Product details

The MUN5335DW1T2 by onsemi is a cutting-edge pre-biased bipolar junction transistor (BJT) array, part of the Discrete Semiconductor Products family under Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is designed to meet the needs of modern electronics, offering high efficiency and reliability. The MUN5335DW1T2 features integrated pre-biasing, which streamlines circuit design and reduces component count. Its excellent thermal performance ensures consistent operation even in challenging environments. This BJT array is perfect for applications such as motor control, LED drivers, and power supplies. The MUN5335DW1T2 provides high gain and low saturation voltage, making it ideal for precision tasks. It is also widely used in renewable energy systems, robotics, and IoT devices. The compact and robust design of the MUN5335DW1T2 makes it suitable for both industrial and consumer applications. For engineers looking for a dependable and high-performance transistor array, the MUN5335DW1T2 is an excellent choice. Submit your inquiry now to get detailed information on pricing and delivery options tailored to your needs.

General specs

  • Product Status: Obsolete
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 2.2kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: -
  • Power - Max: -
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363

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