SMMUN2134LT1G
onsemi
onsemi
TRANS PREBIAS PNP 50V SOT23-3
$0.05
Available to order
Reference Price (USD)
3,000+
$0.03240
6,000+
$0.02922
15,000+
$0.02541
30,000+
$0.02287
75,000+
$0.02033
150,000+
$0.01694
Exquisite packaging
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SMMUN2134LT1G
$0.05
Product details
Engineered for efficiency, the SMMUN2134LT1G pre-biased BJT by onsemi delivers superior signal amplification in compact packages. Its built-in bias network eliminates external components, reducing board space and assembly costs. The transistor excels in load switching, LED driving, and audio pre-amplification scenarios. Notable characteristics involve thermal shutdown protection, wide operating temperature ranges, and compatibility with automated pick-and-place systems. Industries leveraging this solution include industrial automation (PLC signal conditioning), consumer electronics (battery management systems), and telecommunications (signal repeaters). Streamline your BOM with this versatile component request a quote now for lead time details.
General specs
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 22 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 246 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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