DDTC115GE-7
Diodes Incorporated
Diodes Incorporated
TRANS PREBIAS NPN 150MW SOT523
$0.08
Available to order
Reference Price (USD)
1+
$0.07920
500+
$0.078408
1000+
$0.077616
1500+
$0.076824
2000+
$0.076032
2500+
$0.07524
Exquisite packaging
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DDTC115GE-7
$0.08
Product details
Delivering unmatched consistency, the DDTC115GE-7 pre-biased transistor by Diodes Incorporated features laser-trimmed resistors for precise biasing accuracy. The BJT excels in audio frequency applications due to its low intermodulation distortion, while its robust construction supports repetitive surge currents in switching scenarios. Typical deployments include power supply feedback loops, CNC machine signal conditioning, and photovoltaic system monitoring circuits. The component's MSL3-rated packaging guarantees moisture sensitivity control during storage. Engineers value its parametric consistency across extended production runs, reducing calibration overhead. Initiate your design-in process request free samples of DDTC115GE-7 through our e-commerce platform.
General specs
- Product Status: Discontinued at Digi-Key
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): -
- Resistor - Emitter Base (R2): 100 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250 MHz
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SOT-523
- Supplier Device Package: SOT-523
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