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SBC847CDXV6T1G

onsemi
SBC847CDXV6T1G Preview
onsemi
TRANS 2NPN 45V 0.1A SOT-563
$0.39
Available to order
Reference Price (USD)
4,000+
$0.08169
Exquisite packaging
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onsemi SBC847CDXV6T1G is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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SBC847CDXV6T1G

SBC847CDXV6T1G

$0.39

Product details

onsemi's SBC847CDXV6T1G stands as a superior choice in Bipolar Junction Transistor (BJT) Arrays within Discrete Semiconductor Products. This high-performance component combines multiple transistors with tightly controlled parameters in a single package. The SBC847CDXV6T1G delivers exceptional current amplification with minimal variation between elements. Its design focuses on thermal equilibrium across all transistors for uniform performance. The product features low leakage currents and high breakdown voltage ratings. With its space-efficient packaging, it enables compact circuit designs without sacrificing capability. The SBC847CDXV6T1G demonstrates excellent switching characteristics for both analog and digital applications. Its robust construction ensures reliability in challenging operating environments. Precision instrumentation benefits from its stable amplification characteristics. Motor drive circuits utilize its synchronized switching capabilities. Power conversion systems employ it for efficient energy management. The SBC847CDXV6T1G also finds application in sophisticated control systems. onsemi has implemented advanced quality assurance protocols in its manufacturing. The component's design facilitates effective heat dissipation in high-power scenarios. Its RoHS-compliant construction meets contemporary environmental standards. For engineers requiring reliable, high-performance transistor arrays, the SBC847CDXV6T1G offers an excellent solution. Contact us today through our online platform to inquire about pricing and delivery options.

General specs

  • Product Status: Active
  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
  • Power - Max: 500mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563

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