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JANTX2N5795

Microchip Technology
JANTX2N5795 Preview
Microchip Technology
NPN TRANSISTOR
$123.98
Available to order
Reference Price (USD)
1+
$123.97500
500+
$122.73525
1000+
$121.4955
1500+
$120.25575
2000+
$119.016
2500+
$117.77625
Exquisite packaging
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JANTX2N5795

JANTX2N5795

$123.98

Product details

Discover the engineering excellence of Microchip Technology's JANTX2N5795, a premier Bipolar Junction Transistor (BJT) Array in the Discrete Semiconductor Products category. This advanced component integrates multiple transistors with matched characteristics for precision circuit applications. The JANTX2N5795 offers outstanding current handling capacity with excellent thermal properties. Its design ensures parameter consistency across all transistors in the array. The product features low saturation voltage for enhanced energy efficiency in operation. With its high-frequency response, it suits demanding switching applications. The JANTX2N5795 maintains stable performance across wide temperature ranges. Its compact form factor supports space-constrained design requirements. Audio amplification systems benefit from its low distortion characteristics. Power supply circuits utilize its reliable switching performance. Sensor interface electronics employ its precise current amplification. The JANTX2N5795 also serves critical functions in automotive control modules. Microchip Technology has applied rigorous testing procedures to guarantee product reliability. The component's construction allows for effective thermal management in operation. Its design complies with international standards for quality and safety. Engineers value its consistent performance in both prototype and production environments. The JANTX2N5795 represents a versatile solution for diverse electronic applications. To learn more about this high-performance BJT Array, submit your inquiry through our website today.

General specs

  • Product Status: Active
  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 600mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6

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