NXH010P120MNF1PNG
onsemi
onsemi
PIM F1 SIC HALFBRIDGE 1200V 10MO
$125.33
Available to order
Reference Price (USD)
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$125.33286
500+
$124.0795314
1000+
$122.8262028
1500+
$121.5728742
2000+
$120.3195456
2500+
$119.066217
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NXH010P120MNF1PNG
$125.33
Product details
Introducing the NXH010P120MNF1PNG from onsemi, a high-performance MOSFET array in the Discrete Semiconductor Products category. Part of the Transistors - FETs, MOSFETs - Arrays subcategory, this product is designed for applications requiring robust power handling and efficient switching.\n\nThe NXH010P120MNF1PNG offers features such as low gate charge, high current capability, and excellent thermal performance. The array format integrates multiple transistors, simplifying design and reducing component count. Its reliable construction ensures consistent operation in demanding environments.\n\nThis MOSFET array is widely used in home appliances, industrial drives, and telecommunications. Home appliances benefit from its energy efficiency and durability. Industrial drives utilize its high power handling for motor control. Telecommunications equipment relies on its fast switching for signal processing.\n\nReady to incorporate the NXH010P120MNF1PNG into your projects? Submit an inquiry to get started. Our team is here to provide the support and information you need.
General specs
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
- Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
- Vgs(th) (Max) @ Id: 4.3V @ 40mA
- Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V
- Power - Max: 250W (Tj)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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