DMTH10H017LPDQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 61V~100V POWERDI50
$0.77
Available to order
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$0.77235
500+
$0.7646265
1000+
$0.756903
1500+
$0.7491795
2000+
$0.741456
2500+
$0.7337325
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DMTH10H017LPDQ-13
$0.77
Product details
The DMTH10H017LPDQ-13 from Diodes Incorporated is a high-efficiency MOSFET array in the Discrete Semiconductor Products category, part of the Transistors - FETs, MOSFETs - Arrays subcategory. This product is designed for applications requiring high power density and reliable performance.\n\nKey features of the DMTH10H017LPDQ-13 include low on-resistance, fast switching, and superior thermal characteristics. The array format integrates multiple transistors, simplifying design and saving board space. Its robust construction ensures durability in challenging environments.\n\nIdeal uses include electric vehicle power systems, industrial controls, and consumer electronics. Electric vehicle power systems benefit from its high current handling and efficiency. Industrial controls utilize its reliability for precise operation. Consumer electronics rely on its compact design and performance.\n\nEnhance your designs with the DMTH10H017LPDQ-13. Request a quote today to explore how this MOSFET array can meet your requirements. Our team is here to provide the support you need.
General specs
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc)
- Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V
- Power - Max: 1.5W (Ta), 93W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PowerDI5060-8 (Type E)
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