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NTMS3P03R2G

onsemi
NTMS3P03R2G Preview
onsemi
MOSFET P-CH 30V 2.34A 8SOIC
$0.30
Available to order
Reference Price (USD)
2,500+
$0.28645
Exquisite packaging
Discount
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NTMS3P03R2G

NTMS3P03R2G

$0.30

Product details

General specs

  • Product Status: Obsolete
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 2.34A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 3.05A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 24 V
  • FET Feature: -
  • Power Dissipation (Max): 730mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)

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