IPU50R1K4CEAKMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 500V 3.1A TO251-3
$0.14
Available to order
Reference Price (USD)
1,500+
$0.20981
Exquisite packaging
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| EMS | 3-7 days |
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IPU50R1K4CEAKMA1
$0.14
Product details
General specs
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 13V
- Rds On (Max) @ Id, Vgs: 1.4Ohm @ 900mA, 13V
- Vgs(th) (Max) @ Id: 3.5V @ 70µA
- Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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