NTH4L040N120SC1
onsemi
onsemi
SICFET N-CH 1200V 58A TO247-4
$31.62
Available to order
Reference Price (USD)
1+
$31.62000
500+
$31.3038
1000+
$30.9876
1500+
$30.6714
2000+
$30.3552
2500+
$30.039
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
onsemi NTH4L040N120SC1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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NTH4L040N120SC1
$31.62
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
- Vgs(th) (Max) @ Id: 4.3V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
- Vgs (Max): +25V, -15V
- Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 319W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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