IPBE65R099CFD7AATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 24A TO263-7
$9.07
Available to order
Reference Price (USD)
1+
$9.07000
500+
$8.9793
1000+
$8.8886
1500+
$8.7979
2000+
$8.7072
2500+
$8.6165
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| EMS | 3-7 days |
Infineon Technologies IPBE65R099CFD7AATMA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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IPBE65R099CFD7AATMA1
$9.07
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 630µA
- Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 127W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-3-10
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
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