NTH4L015N065SC1
onsemi
onsemi
SILICON CARBIDE MOSFET, NCHANNEL
$40.96
Available to order
Reference Price (USD)
1+
$40.96000
500+
$40.5504
1000+
$40.1408
1500+
$39.7312
2000+
$39.3216
2500+
$38.912
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
onsemi NTH4L015N065SC1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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NTH4L015N065SC1
$40.96
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V
- Vgs(th) (Max) @ Id: 4.3V @ 25mA
- Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
- Vgs (Max): +22V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 325 V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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