Shopping cart

Subtotal: $0.00

RFM6P10

Harris Corporation
RFM6P10 Preview
Harris Corporation
P-CHANNEL POWER MOSFET
$1.56
Available to order
Reference Price (USD)
1+
$1.56000
500+
$1.5444
1000+
$1.5288
1500+
$1.5132
2000+
$1.4976
2500+
$1.482
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Harris Corporation RFM6P10 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
RFM6P10

RFM6P10

$1.56

Product details

Harris Corporation presents the RFM6P10, a high-efficiency single MOSFET transistor that excels in the Discrete Semiconductor Products category (Transistors - FETs, MOSFETs - Single). This component combines innovative semiconductor technology with practical design features to deliver superior performance in power management applications. The RFM6P10 offers significant advantages including optimized switching behavior, reduced conduction losses, and enhanced thermal performance. These characteristics translate to improved system efficiency and reliability in your electronic designs. The MOSFET is particularly effective in medical imaging equipment, laboratory instrumentation, and diagnostic devices where precision power control is essential. Industrial applications benefit from its use in CNC machinery, packaging systems, and material handling equipment. For the energy sector, it's ideal for smart grid components and power monitoring systems. The RFM6P10 also performs exceptionally in professional lighting systems and advanced HVAC controls. With its robust construction and electrical efficiency, this component provides design engineers with a reliable solution for diverse power switching requirements. Interested in incorporating this high-performance MOSFET into your designs? Submit your inquiry through our online platform to receive comprehensive product details, technical support, and competitive pricing information from our expert team.

General specs

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3

Viewed products

Diodes Incorporated

DMTH8028LFVWQ-7

$0.00 (not set)
onsemi

NILMS4501NR2

$0.00 (not set)
Infineon Technologies

IAUZ30N08S5N186ATMA1

$0.00 (not set)
Diodes Incorporated

DMN4036LK3Q-13

$0.00 (not set)
Vishay Siliconix

SQD50P08-28-T4_GE3

$0.00 (not set)
Renesas

NP34N055SLE-E1-AY

$0.00 (not set)
Transphorm

TP65H050G4WS

$0.00 (not set)
Diodes Incorporated

DMT3020LFDFQ-13

$0.00 (not set)
Diodes Incorporated

DMTH8008LFG-7

$0.00 (not set)
Diodes Incorporated

DMT67M8LPSW-13

$0.00 (not set)
Top