G3R40MT12J
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH 75A TO263-7
$19.05
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G3R40MT12J
$19.05
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 48mOhm @ 35A, 15V
- Vgs(th) (Max) @ Id: 2.69V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 15 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 2929 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 374W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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