Shopping cart

Subtotal: $0.00

NSVT45010MW6T1G

onsemi
NSVT45010MW6T1G Preview
onsemi
TRANS 2PNP 45V 0.1A SC88-6
$0.48
Available to order
Reference Price (USD)
3,000+
$0.18893
6,000+
$0.17738
15,000+
$0.16583
30,000+
$0.16390
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

onsemi NSVT45010MW6T1G is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
NSVT45010MW6T1G

NSVT45010MW6T1G

$0.48

Product details

Discover the engineering excellence of onsemi's NSVT45010MW6T1G, a premier Bipolar Junction Transistor (BJT) Array in the Discrete Semiconductor Products category. This advanced component integrates multiple transistors with matched characteristics for precision circuit applications. The NSVT45010MW6T1G offers outstanding current handling capacity with excellent thermal properties. Its design ensures parameter consistency across all transistors in the array. The product features low saturation voltage for enhanced energy efficiency in operation. With its high-frequency response, it suits demanding switching applications. The NSVT45010MW6T1G maintains stable performance across wide temperature ranges. Its compact form factor supports space-constrained design requirements. Audio amplification systems benefit from its low distortion characteristics. Power supply circuits utilize its reliable switching performance. Sensor interface electronics employ its precise current amplification. The NSVT45010MW6T1G also serves critical functions in automotive control modules. onsemi has applied rigorous testing procedures to guarantee product reliability. The component's construction allows for effective thermal management in operation. Its design complies with international standards for quality and safety. Engineers value its consistent performance in both prototype and production environments. The NSVT45010MW6T1G represents a versatile solution for diverse electronic applications. To learn more about this high-performance BJT Array, submit your inquiry through our website today.

General specs

  • Product Status: Active
  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
  • Power - Max: 380mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363

Viewed products

NXP USA Inc.

PEMX1,315

$0.00 (not set)
onsemi

NSVEMX1DXV6T1G

$0.00 (not set)
Panjit International Inc.

MMDT3904_R1_00001

$0.00 (not set)
onsemi

ECH8501-TL-H

$0.00 (not set)
Micro Commercial Co

BC856S-TP

$0.00 (not set)
Micro Commercial Co

BC857S-TP

$0.00 (not set)
Diodes Incorporated

MMDT3906-LS

$0.00 (not set)
Rohm Semiconductor

UMX5NTR

$0.00 (not set)
Linear Integrated Systems, Inc.

IT130A SOIC 8L

$0.00 (not set)
Diodes Incorporated

DSS4160FDB-7

$0.00 (not set)
Top