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UMX5NTR

Rohm Semiconductor
UMX5NTR Preview
Rohm Semiconductor
TRANS 2NPN 11V 0.05A 6UMT
$0.50
Available to order
Reference Price (USD)
3,000+
$0.11715
6,000+
$0.11005
15,000+
$0.10295
30,000+
$0.09940
Exquisite packaging
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UMX5NTR

UMX5NTR

$0.50

Product details

The UMX5NTR from Rohm Semiconductor redefines performance in the Bipolar Junction Transistor (BJT) Arrays category of Discrete Semiconductor Products. This innovative component integrates multiple transistors with precisely matched characteristics for coordinated circuit operation. Engineered for excellence, it offers superior current handling and thermal performance. The UMX5NTR features minimal parameter spread across all transistors in the array. Its advanced construction ensures reliable operation in high-frequency applications. The product demonstrates excellent stability over extended operational periods. With its low saturation voltage characteristics, it enhances overall system efficiency. The UMX5NTR is particularly suited for applications requiring multiple synchronized switching elements. Power management systems benefit from its precise current regulation capabilities. Signal processing equipment utilizes its matched characteristics for balanced amplification. Renewable energy inverters employ it for efficient power conversion. The UMX5NTR also plays vital roles in advanced communication systems. Rohm Semiconductor has incorporated cutting-edge semiconductor technology in its production. The component's design supports both through-hole and surface-mount assembly processes. It complies with international standards for quality and environmental safety. Engineers appreciate its consistent performance across temperature variations. The UMX5NTR represents an optimal solution for demanding electronic applications. Learn more about its specifications and availability by contacting our sales team through our website.

General specs

  • Product Status: Active
  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 11V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 10mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 10V
  • Power - Max: 150mW
  • Frequency - Transition: 3.2GHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: UMT6

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