NSVMMBTH81LT3G
onsemi
onsemi
SOT-23 PNP TRANSISTOR 20V
$0.10
Available to order
Reference Price (USD)
1+
$0.09991
500+
$0.0989109
1000+
$0.0979118
1500+
$0.0969127
2000+
$0.0959136
2500+
$0.0949145
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
onsemi NSVMMBTH81LT3G is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
NSVMMBTH81LT3G
$0.10
Product details
Elevate your RF designs with onsemi's NSVMMBTH81LT3G bipolar junction transistor, a premium choice in discrete semiconductor components. This BJT features exceptional gain flatness across wide bandwidths, making it ideal for multi-channel communication systems. Its advanced surface treatment process reduces recombination losses while improving high-frequency response. The transistor offers excellent parameter consistency with tight production tolerances for predictable performance. Key application areas include phased array radar systems requiring precise amplitude and phase matching. Commercial wireless applications span LTE-Advanced and 5G NR small cell power amplifiers. In industrial settings, it enables reliable operation in RFID readers and wireless process monitoring equipment. The medical diagnostics sector benefits from its low-noise characteristics in portable ultrasound imaging devices. The NSVMMBTH81LT3G also supports critical functions in electronic countermeasure systems and spectrum monitoring equipment. Its versatile packaging options accommodate various heat sinking requirements and PCB mounting configurations. onsemi backs this product with extensive reliability testing including HTOL and ESD robustness verification. Access our online design center for simulation models and reference circuit layouts. Our application engineers are available to provide technical guidance on impedance matching networks and stability analysis. Contact us today to discuss your project requirements and receive competitive pricing for the NSVMMBTH81LT3G RF transistor series.
General specs
- Product Status: Active
- Transistor Type: PNP
- Voltage - Collector Emitter Breakdown (Max): 20V
- Frequency - Transition: 600MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 225mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
Viewed products
