NE664M04-T2-A
CEL
CEL
RF TRANS NPN 5V 20GHZ SOT343F
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
CEL NE664M04-T2-A is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
NE664M04-T2-A
$0.00
Product details
Engineered for excellence, the NE664M04-T2-A RF BJT transistor from CEL sets new benchmarks in discrete semiconductor performance. This bipolar junction transistor offers exceptional gain-bandwidth product characteristics, making it ideal for challenging RF amplification scenarios. The product features advanced doping techniques that enhance carrier mobility while minimizing noise figures. Its symmetrical design allows for flexible circuit configurations in both common emitter and common base topologies. The NE664M04-T2-A demonstrates remarkable stability across temperature variations and supply voltage fluctuations. Industrial applications range from plasma generation systems to laser diode drivers requiring precise current control. In the energy sector, it facilitates efficient power conversion in smart grid communication modules. Medical device manufacturers incorporate this transistor in diagnostic ultrasound machines and patient monitoring equipment. For research institutions, it enables accurate signal processing in particle accelerator controls and radio astronomy receivers. The device's hermetically sealed package option ensures reliability in high-humidity environments. CEL employs state-of-the-art wafer fabrication processes to guarantee consistent performance parameters. Backed by industry-leading technical support and rapid prototyping assistance, the NE664M04-T2-A simplifies your RF design challenges. View our interactive product selector guide or consult with our application engineers for tailored recommendations. Request a quote today to discover how this transistor can enhance your specific application requirements.
General specs
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5V
- Frequency - Transition: 20GHz
- Noise Figure (dB Typ @ f): -
- Gain: 12dB
- Power - Max: 735mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 3V
- Current - Collector (Ic) (Max): 500mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-343F
- Supplier Device Package: SOT-343F
Viewed products
