NSVBC123JDXV6T5G
onsemi
onsemi
SS SOT563 SRF MT RST XSTR
$0.11
Available to order
Reference Price (USD)
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$0.10844
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$0.1073556
1000+
$0.1062712
1500+
$0.1051868
2000+
$0.1041024
2500+
$0.103018
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NSVBC123JDXV6T5G
$0.11
Product details
Upgrade your electronic projects with the NSVBC123JDXV6T5G from onsemi, a superior pre-biased bipolar junction transistor (BJT) array. This product belongs to the Discrete Semiconductor Products category, specifically Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The NSVBC123JDXV6T5G is designed to deliver high performance in amplification and switching tasks, offering reliability and efficiency. Its pre-biased configuration reduces circuit complexity and enhances functionality. The transistor array boasts excellent thermal management, ensuring stable performance in various environments. Perfect for use in power converters, audio amplifiers, and sensor circuits, the NSVBC123JDXV6T5G provides consistent and accurate results. It is also commonly utilized in automotive electronics, medical devices, and smart home systems. With its high gain and low power consumption, the NSVBC123JDXV6T5G is ideal for energy-efficient applications. The robust and compact design of this BJT array makes it a versatile choice for diverse projects. To learn more about the NSVBC123JDXV6T5G and how it can benefit your designs, contact us for a detailed quote and expert advice.
General specs
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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