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DCX124EUQ-13-F

Diodes Incorporated
DCX124EUQ-13-F Preview
Diodes Incorporated
PREBIAS TRANSISTOR SOT363 T&R 10
$0.08
Available to order
Reference Price (USD)
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$0.07615
500+
$0.0753885
1000+
$0.074627
1500+
$0.0738655
2000+
$0.073104
2500+
$0.0723425
Exquisite packaging
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Diodes Incorporated DCX124EUQ-13-F is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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DCX124EUQ-13-F

DCX124EUQ-13-F

$0.08

Product details

The DCX124EUQ-13-F by Diodes Incorporated is a high-quality pre-biased bipolar junction transistor (BJT) array, categorized under Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is designed to provide exceptional performance in various electronic applications, ensuring reliability and efficiency. The DCX124EUQ-13-F features integrated pre-biasing, which minimizes external components and simplifies design. Its excellent thermal stability guarantees consistent operation under diverse conditions. This BJT array is ideal for applications such as signal amplification, load switching, and interface circuits. The DCX124EUQ-13-F is also widely used in industrial automation, consumer electronics, and telecommunications. With its high gain and low noise performance, it is perfect for sensitive and precision-driven tasks. The compact and durable design of the DCX124EUQ-13-F makes it suitable for both high-volume and specialized applications. Engineers and designers can rely on this transistor array for its consistent quality and performance. For more information on the DCX124EUQ-13-F and to receive a customized quote, please submit an inquiry and our team will respond promptly.

General specs

  • Product Status: Active
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 22kOhms
  • Resistor - Emitter Base (R2): 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363

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