NSS20200DMTTBG
onsemi
onsemi
TRANS PNP 20V 2A 6WDFN
$0.25
Available to order
Reference Price (USD)
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$0.25453
500+
$0.2519847
1000+
$0.2494394
1500+
$0.2468941
2000+
$0.2443488
2500+
$0.2418035
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NSS20200DMTTBG
$0.25
Product details
The NSS20200DMTTBG from onsemi sets new standards in Bipolar Junction Transistor (BJT) Array technology for Discrete Semiconductor Products. This advanced component integrates multiple transistors with precisely matched characteristics in a space-saving package. Designed for demanding electronic applications, it offers superior current amplification and switching capabilities. The NSS20200DMTTBG features excellent parameter consistency across all transistors in the array. Its robust construction ensures reliable operation in both pulsed and continuous modes. The product's optimized thermal design prevents performance degradation under load. With its low collector-emitter saturation voltage, it maximizes energy efficiency in circuits. The NSS20200DMTTBG is ideal for applications requiring synchronized transistor operation. Industrial motor control systems benefit from its precise switching characteristics. LED lighting drivers utilize its efficient current regulation capabilities. Battery management systems employ it for accurate charge/discharge control. The NSS20200DMTTBG also finds use in sophisticated RF amplification circuits. onsemi has incorporated advanced manufacturing techniques to ensure product reliability. Its compatibility with automated assembly processes streamlines production integration. The component meets international standards for quality and environmental compliance. Engineers trust the NSS20200DMTTBG for critical applications where performance consistency is paramount. Its versatility makes it suitable for both prototyping and mass production scenarios. Discover how this BJT Array can enhance your electronic designs by contacting us for more information.
General specs
- Product Status: Active
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
- Power - Max: -
- Frequency - Transition: 155MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-WDFN Exposed Pad
- Supplier Device Package: 6-WDFN (2x2)
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