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ULN2803ADWR

Texas Instruments
ULN2803ADWR Preview
Texas Instruments
TRANS 8NPN DARL 50V 0.5A 18SO
$1.29
Available to order
Reference Price (USD)
2,000+
$0.62916
6,000+
$0.59920
Exquisite packaging
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ULN2803ADWR

ULN2803ADWR

$1.29

Product details

The ULN2803ADWR from Texas Instruments redefines performance in the Bipolar Junction Transistor (BJT) Arrays category of Discrete Semiconductor Products. This innovative component integrates multiple transistors with precisely matched characteristics for coordinated circuit operation. Engineered for excellence, it offers superior current handling and thermal performance. The ULN2803ADWR features minimal parameter spread across all transistors in the array. Its advanced construction ensures reliable operation in high-frequency applications. The product demonstrates excellent stability over extended operational periods. With its low saturation voltage characteristics, it enhances overall system efficiency. The ULN2803ADWR is particularly suited for applications requiring multiple synchronized switching elements. Power management systems benefit from its precise current regulation capabilities. Signal processing equipment utilizes its matched characteristics for balanced amplification. Renewable energy inverters employ it for efficient power conversion. The ULN2803ADWR also plays vital roles in advanced communication systems. Texas Instruments has incorporated cutting-edge semiconductor technology in its production. The component's design supports both through-hole and surface-mount assembly processes. It complies with international standards for quality and environmental safety. Engineers appreciate its consistent performance across temperature variations. The ULN2803ADWR represents an optimal solution for demanding electronic applications. Learn more about its specifications and availability by contacting our sales team through our website.

General specs

  • Product Status: Active
  • Transistor Type: 8 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 18-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 18-SOIC

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