NGTB50N65FL2WG
onsemi
onsemi
IGBT TRENCH/FS 650V 100A TO247-3
$6.53
Available to order
Reference Price (USD)
90+
$6.00867
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NGTB50N65FL2WG
$6.53
Product details
The NGTB50N65FL2WG from onsemi is a state-of-the-art single IGBT transistor designed for high-power switching applications. This discrete semiconductor product is ideal for use in solar inverters, motor drives, and power distribution systems, offering exceptional efficiency and durability. With its low conduction losses and high thermal conductivity, the NGTB50N65FL2WG ensures reliable operation in extreme environments. Engineers will appreciate its fast switching speed and compatibility with various control circuits. Upgrade your power management solutions with the NGTB50N65FL2WG and achieve superior performance. For more information and to place an order, contact us today.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
- Power - Max: 417 W
- Switching Energy: 1.5mJ (on), 460µJ (off)
- Input Type: Standard
- Gate Charge: 220 nC
- Td (on/off) @ 25°C: 100ns/237ns
- Test Condition: 400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): 94 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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