BIDW50N65T
Bourns Inc.
Bourns Inc.
IGBT 650V 50A TRENCH TO-247-3L
$5.62
Available to order
Reference Price (USD)
1+
$5.62000
500+
$5.5638
1000+
$5.5076
1500+
$5.4514
2000+
$5.3952
2500+
$5.339
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BIDW50N65T
$5.62
Product details
The BIDW50N65T from Bourns Inc. is a premium single IGBT transistor designed for high-efficiency power switching. This discrete semiconductor product is perfect for applications in traction systems, uninterruptible power supplies, and industrial motor controls. With its superior thermal performance and low on-state voltage, the BIDW50N65T ensures optimal energy savings and extended operational life. Its rugged design withstands high current and voltage stresses, making it a reliable choice for critical power management tasks. Engineers will find its compatibility with various gate drivers a significant advantage. Discover the benefits of the BIDW50N65T for your next project request a quote today.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
- Power - Max: 416 W
- Switching Energy: 3mJ (on), 1.1mJ (off)
- Input Type: Standard
- Gate Charge: 123 nC
- Td (on/off) @ 25°C: 37ns/125ns
- Test Condition: 400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): 37.5 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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