NGTB50N65FL2WAG
onsemi
onsemi
IGBT FIELD STOP 650V 160A TO247
$2.35
Available to order
Reference Price (USD)
1+
$2.35000
500+
$2.3265
1000+
$2.303
1500+
$2.2795
2000+
$2.256
2500+
$2.2325
Exquisite packaging
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NGTB50N65FL2WAG
$2.35
Product details
Maximize power efficiency with the NGTB50N65FL2WAG single IGBT transistor by onsemi. This high-quality component is engineered for applications requiring robust switching and thermal stability, such as renewable energy systems, industrial welding machines, and electric vehicle powertrains. The NGTB50N65FL2WAG features low switching losses and high current capacity, ensuring reliable performance in demanding conditions. Its compact design and ease of integration make it a favorite among power electronics designers. Whether you're working on large-scale industrial projects or compact consumer electronics, the NGTB50N65FL2WAG delivers the performance you need. Get started today by submitting an online inquiry for pricing and availability.
General specs
- Product Status: Obsolete
- IGBT Type: Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 160 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
- Power - Max: 417 W
- Switching Energy: 420µJ (on), 550µJ (off)
- Input Type: Standard
- Gate Charge: 215 nC
- Td (on/off) @ 25°C: 23ns/123ns
- Test Condition: 400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): 94 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-4
- Supplier Device Package: TO-247-4L
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