NGTB50N120FL2WG
onsemi
onsemi
IGBT 1200V 100A 535W TO247
$11.59
Available to order
Reference Price (USD)
1+
$10.15000
30+
$8.79033
120+
$7.67933
510+
$6.73261
1,020+
$5.90940
Exquisite packaging
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NGTB50N120FL2WG
$11.59
Product details
Optimize your power electronics with the NGTB50N120FL2WG single IGBT transistor from onsemi. This high-efficiency component is engineered to deliver superior switching performance and thermal management, ensuring long-term reliability in harsh operating conditions. The NGTB50N120FL2WG is perfect for applications requiring precise control and high power handling, such as industrial motor drives, UPS systems, and solar inverters. Its low saturation voltage and fast switching speed minimize energy loss, improving overall system efficiency. Designed for easy integration, this IGBT transistor is a must-have for engineers seeking dependable power solutions. Discover how the NGTB50N120FL2WG can enhance your next project request a quote now.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
- Power - Max: 535 W
- Switching Energy: 4.4mJ (on), 1.4mJ (off)
- Input Type: Standard
- Gate Charge: 311 nC
- Td (on/off) @ 25°C: 118ns/282ns
- Test Condition: 600V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): 256 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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