NGTB30N135IHRWG
onsemi
onsemi
IGBT TRENCH/FS 1350V 60A TO247
$2.70
Available to order
Reference Price (USD)
1+
$5.54000
30+
$4.73333
120+
$4.12533
510+
$3.53769
1,020+
$3.01079
Exquisite packaging
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NGTB30N135IHRWG
$2.70
Product details
Optimize your power electronics with the NGTB30N135IHRWG single IGBT transistor from onsemi. This high-efficiency component is engineered to deliver superior switching performance and thermal management, ensuring long-term reliability in harsh operating conditions. The NGTB30N135IHRWG is perfect for applications requiring precise control and high power handling, such as industrial motor drives, UPS systems, and solar inverters. Its low saturation voltage and fast switching speed minimize energy loss, improving overall system efficiency. Designed for easy integration, this IGBT transistor is a must-have for engineers seeking dependable power solutions. Discover how the NGTB30N135IHRWG can enhance your next project request a quote now.
General specs
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1350 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 30A
- Power - Max: 394 W
- Switching Energy: 850µJ (off)
- Input Type: Standard
- Gate Charge: 234 nC
- Td (on/off) @ 25°C: -/250ns
- Test Condition: 600V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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