IKP30N65H5XKSA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH 650V 55A TO220-3
$3.24
Available to order
Reference Price (USD)
1+
$3.29000
10+
$2.95700
100+
$2.42260
500+
$2.06232
1,000+
$1.73930
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IKP30N65H5XKSA1
$3.24
Product details
Experience unparalleled power control with the IKP30N65H5XKSA1 single IGBT transistor by Infineon Technologies. This high-efficiency component is perfect for applications in industrial automation, renewable energy, and automotive systems. The IKP30N65H5XKSA1 boasts low energy loss and high switching frequency, making it a top choice for modern power electronics. Its robust design ensures long-term reliability even under high stress and temperature variations. Whether you're designing for high-power or compact systems, the IKP30N65H5XKSA1 offers the flexibility and performance you need. Submit your inquiry online to learn more about this advanced IGBT transistor.
General specs
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 55 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
- Power - Max: 188 W
- Switching Energy: 280µJ (on), 100µJ (off)
- Input Type: Standard
- Gate Charge: 70 nC
- Td (on/off) @ 25°C: 19ns/177ns
- Test Condition: 400V, 15A, 23Ohm, 15V
- Reverse Recovery Time (trr): 51 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: PG-TO220-3
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